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MRF7S38040HR3 mrf7s38040hsr3 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for wimax base station a pplications with frequencies up to 3800 mhz. suitable for wimax, wibro, bwa, and ofdm multicarrier class ab and class c amplifier applications. ? typical wimax performance: v dd = 30 volts, i dq = 450 ma, p out = 8 watts avg., f = 3400 - 3600 mhz, 802.16d, 64 qam 3 / 4 , 4 bursts, 7 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf. power gain ? 14 db drain efficiency ? 15.6% device output signal par ? 8.4 db @ 0.01% probability on ccdf acpr @ 5.25 mhz offset ? - 49 dbc in 0.5 mhz channel bandwidth ? capable of handling 10:1 vswr, @ 32 vdc, 3500 mhz, 40 watts cw peak tuned output power ? p out @ 1 db compression point 40 watts cw features ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? integrated esd protection ? greater negative gate - source voltage range for improved class c operation ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 32 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v ds - 0.5, +65 vdc gate - source voltage v gs - 6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 96 c, 39 w cw case temperature 75 c, 8 w cw r jc 0.78 0.83 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select tools/software/application software/calculators to access the mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mrf7s38040h rev. 0, 8/2007 freescale semiconductor technical data MRF7S38040HR3 mrf7s38040hsr3 3400 - 3600 mhz, 8 w avg., 30 v wimax lateral n - channel rf power mosfets case 465i - 02, style 1 ni - 400 - 240 MRF7S38040HR3 case 465j - 02, style 1 ni - 400s - 240 mrf7s38040hsr3 ? freescale semiconductor, inc., 2007. all rights reserved.
2 rf device data freescale semiconductor MRF7S38040HR3 mrf7s38040hsr3 table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1c (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iv (minimum) table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 124 adc) v gs(th) 1.2 2 2.7 vdc gate quiescent voltage (v dd = 28 vdc, i d = 450 madc, measured in functional test) v gs(q) 2 2.7 3.5 vdc drain - source on - voltage (v gs = 10 vdc, i d = 1.15 adc) v ds(on) 0.1 0.21 0.3 vdc dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 0.4 ? pf output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 229 ? pf input capacitance (v ds = 28 vdc, v gs = 0 vdc 30 mv(rms)ac @ 1 mhz) c iss ? 268 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 30 vdc, i dq = 450 ma, p out = 8 w avg., f = 3400 mhz and f = 3600 mhz, wimax signal, 802.16d, 7 mhz channel bandwidth, 64 qam 3 / 4 , 4 bursts, par = 9.5 db @ 0.01% probability on ccdf. acpr measured in 0.5 mhz channel bandwidth @ 5.25 mhz offset. power gain g ps 12 14 16 db drain efficiency d 14 15.6 24 % output peak - to - average ratio @ 0.01% probability on ccdf par 7.3 8.4 ? db adjacent channel power ratio acpr ? -49 -46 dbc input return loss irl ? -10 -5 db 1. part internally matched both on input and output. (continued)
MRF7S38040HR3 mrf7s38040hsr3 3 rf device data freescale semiconductor table 4. electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances ofdm signal (in freescale test fixture, 50 ohm system) v dd = 30 vdc, i dq = 450 ma, p out = 8 w avg., f = 3400 mhz and f = 3600 mhz, wimax signal, ofdm single - carrier, 7 mhz channel bandwidth, 64 qam 3 / 4 , 4 bursts, par = 9.5 db @ 0.01% probability on ccdf. mask system type g @ p out = 8 w avg. point b at 3.5 mhz offset point c at 5 mhz offset point d at 7.4 mhz offset point e at 14 mhz offset point f at 17.5 mhz offset mask ? ? ? ? ? -27 -38 -42 -60 -60 ? ? ? ? ? dbc relative constellation error @ p out = 8 w avg. (1) rce ? -34 ? db error vector magnitude (1) (typical evm performance @ p out = 8 w avg. with ofdm 802.16d signal call) evm ? 2.0 ? % rms typical performances (in freescale test fixture, 50 ohm system) v dd = 30 vdc, i dq = 450 ma, 3400 - 3600 mhz bandwidth video bandwidth @ 44 w pep p out where im3 = - 30 dbc (tone spacing from 100 khz to vbw) imd3 = imd3 @ vbw frequency - imd3 @ 100 khz <1 dbc (both sidebands) vbw ? 30 ? mhz gain flatness in 200 mhz bandwidth @ p out = 8 w avg. g f ? 0.87 ? db average deviation from linear phase in 200 mhz bandwidth @ p out = 40 w cw ? 1.62 ? average group delay @ p out = 40 w cw, f = 3500 mhz delay ? 1.65 ? ns part - to - part insertion phase variation @ p out = 40 w cw, f = 3500 mhz, six sigma window ? ? 22.9 ? gain variation over temperature (-30 c to +85 c) g ? 0.027 ? db/ c output power variation over temperature (-30 c to +85 c) p1db ? 0.121 ? dbm/ c 1. rce = 20log(evm/100)
4 rf device data freescale semiconductor MRF7S38040HR3 mrf7s38040hsr3 figure 1. MRF7S38040HR3(hsr3) test circuit schematic z10, z11 0.061 x 0.322 microstrip z12 0.694 x 0.050 microstrip z13 0.268 x 0.071 microstrip z14 0.095 x 0.674 microstrip z15 0.359 x 0.674 microstrip z16 0.640 x 0.241 microstrip z17 0.410 x 0.084 microstrip z18 0.726 x 0.084 microstrip pcb arlon cuclad 250gx - 0300 - 55 - 22, 0.030 , r = 2.55 z1 0.822 x 0.084 microstrip z2 0.454 x 0.386 microstrip z3 0.950 x 0.220 microstrip z4 0.023 x 0.358 microstrip z5 0.400 x 0.379 microstrip z6 0.230 x 0.358 microstrip z7 0.100 x 0.358 x 0.104 taper z8 0.214 x 0.104 microstrip z9 0.050 x 0.213 x 0.322 taper v bias v supply rf output rf input dut z1 z2 z3 z4 c1 c7 z12 z13 b1 z9 z11 z14 z15 z16 z17 z18 c11 + + c13 + c12 c10 c9 c8 z10 z8 z7 z6 z5 c2 c3 c4 c5 c6 + r1 b2 table 5. MRF7S38040HR3(hsr3) test circuit com ponent designations and values part description part number manufacturer b1, b2 chip ferrite beads 2508051107y0 fair - rite c1, c2, c7, c8 2.7 pf chip capacitors atc100b2r7bt500xt atc c3, c9 36 pf chip capacitors atc100b360bt500xt atc c4, c10 0.01 f, 100 v chip capacitors c1825c103j1rac kemet c5 1k pf chip capacitor atc100b102bt50xt atc c6 10 f, 35 v tantalum capacitor t491c106k035at kemet c11 22 f, 35 v tantalum capacitor t491c226k035at kemet c12 470 f, 63 v electrolytic capacitor ekme630ell471mk25s multicomp c13 100 f, 50 v electrolytic capacitor mcht101m1hb - 1017 - rh multicomp r1 180 k , 1/4 w chip resistor crcw12061803fkea vishay
MRF7S38040HR3 mrf7s38040hsr3 5 rf device data freescale semiconductor figure 2. MRF7S38040HR3(hsr3) test circuit component layout cut out area c4 mrf7s38040 rev. 3 c3 b1 r1 b2 c6 c5 c2 c8 c1 c9 c12 c13 c11 c10 c7
6 rf device data freescale semiconductor MRF7S38040HR3 mrf7s38040hsr3 typical characteristics irl, input return loss (db) acpr (dbc) 3400 f, frequency (mhz) figure 3. wimax broadband performance @ p out = 8 watts avg. ?24 ?12 ?16 ?20 11.5 15.5 ?55 16 14 12 ?49 ?51 d , drain efficiency (%) g ps , power gain (db) 15 14.5 14 13.5 13 12.5 3425 3450 3475 3500 3600 10 ?53 ?28 irl g ps d 3525 3550 3575 acpr ?l acpr?u 12 ?47 irl, input return loss (db) acpr (dbc) 3400 f, frequency (mhz) figure 4. wimax broadband performance @ p out = 14 watts avg. ?24 ?12 ?16 ?20 11 15 ?46 22 20 18 ?40 ?42 d , drain efficiency (%) g ps , power gain (db) 14.5 14 13.5 13 12.5 3425 3450 3475 3500 3600 16 ?44 ?28 irl g ps d 3525 3550 3575 acpr ?l acpr?u 12 v dd = 30 vdc, p out = 14 w (avg.) i dq = 450 ma, 802.16d, 64 qam 3 / 4, 4 bursts 7 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf ?38 figure 5. two - tone power gain versus output power 9 16 1 i dq = 675 ma p out , output power (watts) pep 337.5 ma 14 13 11 10 100 g ps , power gain (db) v dd = 30 vdc, i dq = 450 ma f1 = 3495 mhz, f2 = 3505 mhz two ?tone measurements, 10 mhz tone spacing 12 15 450 ma 225 ma figure 6. third order intermodulation distortion versus output power i dq = 225 ma p out , output power (watts) pep 337.5 ma 10 ?20 ?30 ?40 ?50 1 intermodulation distortion (dbc) imd, third order 100 ?10 v dd = 30 vdc, i dq = 450 ma f1 = 3495 mhz, f2 = 3505 mhz two ?tone measurements, 10 mhz tone spacing 675 ma 450 ma 11.5 10 562.5 ma 562.5 ma v dd = 30 vdc, p out = 8 w (avg.) i dq = 450 ma, 802.16d, 64 qam 3 / 4, 4 bursts 7 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf
MRF7S38040HR3 mrf7s38040hsr3 7 rf device data freescale semiconductor typical characteristics figure 7. intermodulation distortion products versus output power p out , output power (watts) pep imd, intermodulation distortion (dbc) ?60 ?10 1 ?40 ?50 10 ?30 ?20 7th order 5th order 3rd order 100 figure 8. intermodulation distortion products versus tone spacing two ?tone spacing (mhz) 10 im3 ?u ?20 ?30 ?50 1 100 imd, intermodulation distortion (dbc) ?40 im3 ?l im5 ?u im5 ?l im7 ?l im7 ?u ?15 ?50 ?55 ?45 figure 9. wimax, acpr, power gain and drain efficiency versus output power 0 p out , output power (watts) avg. wimax 40 35 30 10 100 20 acpr d , drain efficiency (%), g ps , power gain (db) acpr (dbc) d 25 15 g ps v dd = 30 vdc, i dq = 450 ma f1 = 3495 mhz, f2 = 3505 mhz two ?tone measurements, 10 mhz tone spacing v dd = 30 vdc, p out = 44 w (pep), i dq = 450 ma two ?tone measurements (f1 + f2)/2 = center frequency of 3500 mhz 100 8 16 0 40 p out , output power (watts) cw figure 10. power gain and drain efficiency versus cw output power v dd = 30 vdc i dq = 450 ma f = 3500 mhz t c = ?30 c ?30 c 10 1 15 14 13 12 35 30 25 20 15 d , drain efficiency (%) g ps d g ps , power gain (db) figure 11. power gain versus output power p out , output power (watts) cw g ps , power gain (db) 20 10 15 010 12 13 14 i dq = 450 ma f = 3500 mhz 60 v dd = 28 v 30 v ?10 110 ?40 ?35 ?30 ?25 ?20 25 c 85 c 32 v 5 t c = ?30 c v dd = 30 vdc, i dq = 450 ma f = 3500 mhz, 802.16d, 64 qam 3 / 4 4 bursts, 7 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf 25 c ?30 c 85 c 30 40 ?60 85 c 25 c ?30 c 25 c 85 c 11 10 9 10 5 25 c 85 c 11 50
8 rf device data freescale semiconductor MRF7S38040HR3 mrf7s38040hsr3 typical characteristics 250 10 8 90 t j , junction temperature ( c) figure 12. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd = 30 vdc, p out = 8 w avg., and d = 15.6%. mttf calculator available at http:/www.freescale.com/rf. select tools/ software/application software/calculators to access the mttf calcu? lators by product. 10 7 10 6 10 5 110 130 150 170 190 mttf (hours) 210 230 wimax test signal 10 0.0001 100 0 peak ?to?average (db) figure 13. ofdm 802.16d test signal 10 1 0.1 0.01 0.001 24 68 probability (%) input signal compressed output signal @ 8 w avg. p out 802.16d, 64 qam 3 / 4 , 4 bursts, 7 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf ?60 ?110 ?10 (db) ?20 ?30 ?40 ?50 ?70 ?80 ?90 ?100 7 mhz channel bw 7.2 1.8 5.4 3.6 0 ?1.8 ?3.6 ?5.4 ?9 9 f, frequency (mhz) figure 14. wimax spectrum mask specifications ?7.2 point c point c system type g point b point b point d point d
MRF7S38040HR3 mrf7s38040hsr3 9 rf device data freescale semiconductor z o = 25 z load z source f = 3600 mhz f = 3400 mhz f = 3400 mhz f = 3600 mhz v dd = 30 vdc, i dq = 450 ma, p out = 8 w avg. f mhz z source z load 3400 19.57 - j9.98 10.66 - j6.30 3425 20.02 - j9.03 10.41 - j6.55 3450 20.33 - j8.18 9.85 - j6.83 3475 20.45 - j7.42 9.06 - j6.91 3500 20.78 - j6.65 8.30 - j6.84 3525 21.07 - j5.79 7.57 - j6.64 3550 21.45 - j4.55 6.91 - j6.31 3575 22.03 - j3.26 6.39 - j5.92 3600 22.73 - j2.06 5.97 - j5.48 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 15. series equivalent source and load impedance z source z load input matching network device under test output matching network
10 rf device data freescale semiconductor MRF7S38040HR3 mrf7s38040hsr3 package dimensions
MRF7S38040HR3 mrf7s38040hsr3 11 rf device data freescale semiconductor
12 rf device data freescale semiconductor MRF7S38040HR3 mrf7s38040hsr3
MRF7S38040HR3 mrf7s38040hsr3 13 rf device data freescale semiconductor
14 rf device data freescale semiconductor MRF7S38040HR3 mrf7s38040hsr3 product documentation refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 0 aug. 2007 ? initial release of data sheet
MRF7S38040HR3 mrf7s38040hsr3 15 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2007. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf7s38040h rev. 0, 8/2007

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